Novellus Systems, Inc. introduced INOVA NExT with HCM IONX, the latest enhancement to Novellus' 300 mm INOVA metallization system. HCM (Hollow Cathode Magnetron) IONX is the next generation of ionized physical vapor deposition (PVD) source technology, which enables thin film barrier and copper seed deposition scalability for the 32nm node. The pioneer of PVD barrier re-sputter, Novellus has leveraged its extensive experience to launch a production-proven system capable of copper seed re-sputter – a key requirement for all advanced generation copper interconnects.

HCM IONX provides improved metallic film overhang, step coverage and film quality for tantalum barrier and copper seed processes. This differentiated source technology can be applied to other thin film metal applications, including titanium and aluminum. Leading edge logic and memory manufacturers are challenged by demanding critical dimensions (CDs) and the need for reduced overhang of copper barrier and seed layers.

This is especially true in copper memory devices where the most difficult CDs are a generation ahead of logic devices. HCM IONX re-sputter technology is an essential component of reducing film overhang during deposition, and it provides the most extendible seed layer available in the market.

"Customer feedback on HCM IONX is very positive, with a clear indication that the technology is setting the benchmark for copper seed extendibility," said David Smith, senior vice president and general manager of Novellus' Metal Interconnect Business Group. "Our copper seed re-sputter technology is well positioned to help leading edge manufacturers address the requirements of their critical dimensions, especially in memory as they transition to copper. HCM IONX is another example of Novellus' continuous innovation to extend technology, while offering the lowest cost of ownership."

INOVA NExT with HCM IONX is currently being qualified by multiple memory and logic manufacturers, while other customers have already adopted it as their tool of record. HCM IONX generates a high-density plasma which improves step coverage and film quality, leading to improved copper interconnect performance. Novellus' innovations to the source technology provide up to a four times increase in plasma density and more effective control of the ionized flux that arrives at the wafer. These technology advancements are achieved while delivering world-class productivity and defect performance at the lowest cost of ownership.

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